Manufacturer Part Number
NTZD5110NT1G
Manufacturer
onsemi
Introduction
Dual N-Channel MOSFET with a maximum drain-source voltage of 60V
Product Features and Performance
2 N-Channel MOSFETs in a single package
Low on-resistance of 1.6Ω @ 500mA, 10V
Low input capacitance of 24.5pF @ 20V
Logic level gate with a threshold voltage of 2.5V @ 250μA
Low gate charge of 0.7nC @ 4.5V
Suitable for a wide range of applications due to its low power and small size
Product Advantages
Compact, space-saving dual MOSFET design
Low on-resistance and input capacitance for efficient power switching
Logic level gate for easy microcontroller interface
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Continuous Drain Current (Id): 294mA @ 25°C
On-Resistance (Rds(on)): 1.6Ω @ 500mA, 10V
Input Capacitance (Ciss): 24.5pF @ 20V
Gate Threshold Voltage (Vgs(th)): 2.5V @ 250μA
Gate Charge (Qg): 0.7nC @ 4.5V
Power Dissipation: 250mW
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO-certified facility
Compatibility
Surface mount package (SOT-563, SOT-666)
Suitable for a wide range of electronic circuits and applications
Application Areas
Power management
Switching circuits
Motor control
General purpose electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Replacement or upgrade options may be available from onsemi
Key Reasons to Choose This Product
Compact, dual MOSFET design for space-saving layouts
Low on-resistance and input capacitance for efficient power switching
Logic level gate for easy microcontroller integration
Wide operating temperature range for use in diverse environments
RoHS3 compliance for environmentally-friendly applications
NTZD3154NT1AMI Semiconductor/onsemi