Manufacturer Part Number
NTZD3155CT2G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
ROHS3 Compliant
Surface Mount
N and P-Channel Configuration
MOSFET (Metal Oxide) Technology
Logic Level Gate
Operating Temperature: -55°C ~ 150°C (TJ)
Power Max: 250mW
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Current Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Vgs(th) (Max) @ Id: 1V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Product Advantages
ROHS3 Compliant
Surface Mount
Logic Level Gate
Wide Operating Temperature Range
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Current Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Vgs(th) (Max) @ Id: 1V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount
SOT-563, SOT-666 Package
Application Areas
Suitable for a wide range of electronic applications that require discrete semiconductor components
Product Lifecycle
This product is currently available and is not nearing discontinuation.
Several Key Reasons to Choose This Product
ROHS3 Compliant
Surface Mount
Logic Level Gate
Wide Operating Temperature Range
Excellent technical parameters, including low on-resistance, high current capability, and low input capacitance
Suitable for a wide range of electronic applications
NTZD3155CT1G MOSAMI Semiconductor/onsemi