NTZD3154NT1G - onsemi

Manufacturer Part Number

NTZD3154NT1G

Manufacturer

onsemi

Introduction

Two N-Channel MOSFET transistor array in SOT-563 package

Product Features and Performance

Dual N-Channel MOSFET transistors

20V Drain-Source Voltage

550mOhm maximum On-Resistance

540mA continuous Drain Current

150pF maximum Input Capacitance

1V maximum Gate-Source Threshold Voltage

5nC maximum Gate Charge

Product Advantages

Compact SOT-563 surface mount package

High current and power handling capability

Low on-resistance for efficient power switching

Suitable for various power management applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V

Current Continuous Drain (Id) @ 25°C: 540mA

Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V

Vgs(th) (Max) @ Id: 1V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Qualified for industrial and automotive applications

Reliable performance over -55°C to 150°C temperature range

Compatibility

Surface mount SOT-563 or SOT-666 package

Suitable for integration in various power management circuits

Application Areas

Power management

Battery charging and protection

Motor drives

LED driving

General-purpose switching

Product Lifecycle

Current production product

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Compact dual MOSFET design in a small package

High current and power handling capability

Low on-resistance for efficient power switching

Wide temperature range suitability

RoHS3 compliance for environmental friendliness

Integration versatility for various power management applications