Manufacturer Part Number
NTMFD4901NFT1G
Manufacturer
onsemi
Introduction
High-performance N-channel enhancement-mode power MOSFET with low on-resistance and high current capability
Product Features and Performance
Dual N-channel MOSFET in 8-PowerTDFN package
Extremely low on-resistance of 6.5 mOhm @ 10 A, 10 V
High current capability up to 10.3 A continuous and 17.9 A pulsed
Logic-level gate drive with 2.2 V threshold voltage
Fast switching with 9.7 nC maximum gate charge
Temperature range of -55°C to 150°C
Product Advantages
Compact and efficient design for power conversion and control applications
Excellent thermal performance and power dissipation
Enables high efficiency and power density in power supply, motor drive, and other power management circuits
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
On-Resistance (Rds(on)): 6.5 mOhm @ 10 A, 10 V
Continuous Drain Current (ID): 10.3 A @ 25°C
Input Capacitance (Ciss): 1150 pF @ 15 V
Gate Threshold Voltage (Vgs(th)): 2.2 V @ 250 μA
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 standards for automotive applications
Compatibility
Suitable for a wide range of power conversion and control applications, including power supplies, motor drives, and other power management circuits
Application Areas
Power supplies
Motor drives
Power conversion and control circuits
Industrial and automotive electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi.
Several Key Reasons to Choose This Product
Excellent power efficiency and thermal performance due to extremely low on-resistance
High current capability and fast switching for high-performance power conversion and control
Logic-level gate drive for easy integration and control
Compact and efficient design in a small package for space-constrained applications
Automotive-grade quality and reliability for demanding industrial and automotive applications