Manufacturer Part Number
NTMD6P02R2G
Manufacturer
onsemi
Introduction
The NTMD6P02R2G is a dual P-channel MOSFET array from onsemi, designed for a wide range of applications.
Product Features and Performance
Dual P-channel MOSFET design
20V drain-to-source voltage rating
33mOhm maximum on-resistance at 6.2A, 4.5V
8A continuous drain current at 25°C
1700pF maximum input capacitance at 16V
Logic-level gate with 1.2V maximum threshold voltage at 250μA
35nC maximum gate charge at 4.5V
Product Advantages
Compact 8-SOIC surface-mount package
Wide operating temperature range of -55°C to 150°C
RoHS3 compliance for environmental responsibility
Tape and reel packaging for efficient automated assembly
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Continuous Drain Current (Id): 4.8A at 25°C
On-Resistance (Rds(on)): 33mOhm at 6.2A, 4.5V
Input Capacitance (Ciss): 1700pF at 16V
Gate Threshold Voltage (Vgs(th)): 1.2V at 250μA
Quality and Safety Features
RoHS3 compliance for environmental responsibility
Robust 750mW power rating for reliable operation
Compatibility
The NTMD6P02R2G is a direct replacement for similar dual P-channel MOSFET arrays in various electronic applications.
Application Areas
Power management circuits
Motor control systems
Switching applications
General purpose electronics
Product Lifecycle
The NTMD6P02R2G is an active product and is not nearing discontinuation. Replacement or upgrade options are available from onsemi.
Key Reasons to Choose This Product
Compact and efficient dual MOSFET design
Low on-resistance and high current handling capability
Logic-level gate for easy integration
Wide operating temperature range and RoHS3 compliance
Proven reliability and performance from onsemi
NTMD6N03R2G MOSAMI Semiconductor/onsemi