Manufacturer Part Number
NTMD6N04R2G
Manufacturer
onsemi
Introduction
Dual N-channel Power MOSFET
Product Features and Performance
Designed for power switching and amplifier applications
Low on-resistance
High input impedance
Fast switching
Logic-level gate drive
Thermally enhanced package
Product Advantages
High power handling capability
Efficient power conversion
Reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 34mΩ
Continuous Drain Current (Id): 4.6A
Input Capacitance (Ciss): 900pF
Gate Threshold Voltage (Vgs(th)): 3V
Gate Charge (Qg): 30nC
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS compliant
Compatibility
Compatible with standard logic-level gate drive circuits
Application Areas
Power switching and amplifier circuits
Motor drives
Power supplies
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements and upgrades may be available from onsemi.
Key Reasons to Choose This Product
High power handling capability
Efficient power conversion with low on-resistance
Reliable and thermally enhanced package
Compatibility with standard logic-level gate drive circuits
Proven performance in a variety of power electronics applications