NTMD6N03R2G - onsemi

Manufacturer Part Number

NTMD6N03R2G

Manufacturer

onsemi

Introduction

Dual N-Channel MOSFET

Product Features and Performance

30V Drain to Source Voltage (Vdss)

32mOhm maximum On-Resistance (Rds(on)) at 6A, 10V

6A Continuous Drain Current (Id) at 25°C

950pF maximum Input Capacitance (Ciss) at 24V

30nC maximum Gate Charge (Qg) at 10V

Logic Level Gate (Vgs(th) ≤ 2.5V at 250μA)

Wide Operating Temperature Range: -55°C to 150°C

Product Advantages

High Efficiency

Low On-Resistance

Logic Level Gate

Compact 8-SOIC Surface Mount Package

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

On-Resistance (Rds(on)): 32mOhm @ 6A, 10V

Continuous Drain Current (Id): 6A @ 25°C

Input Capacitance (Ciss): 950pF @ 24V

Gate Charge (Qg): 30nC @ 10V

Gate Threshold Voltage (Vgs(th)): ≤ 2.5V @ 250μA

Quality and Safety Features

RoHS3 Compliant

Reliable Surface Mount Package

Compatibility

Suitable for a wide range of power management and control applications

Application Areas

Power Management

Motor Control

Switch Mode Power Supplies

Automotive Electronics

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades available from onsemi

Key Reasons to Choose This Product

High efficiency and low on-resistance for improved system performance

Logic level gate for easy integration with control circuitry

Compact and reliable surface mount package

Wide operating temperature range for use in diverse applications

RoHS3 compliance for environmental responsibility