NTMD6N02R2G - onsemi

Manufacturer Part Number

NTMD6N02R2G

Manufacturer

onsemi

Introduction

Dual N-Channel Power MOSFET Array

Product Features and Performance

20V Drain to Source Voltage (Vdss)

35mOhm maximum On-Resistance (Rds(on))

92A Continuous Drain Current (Id) at 25°C

1100pF maximum Input Capacitance (Ciss)

20nC maximum Gate Charge (Qg)

Logic Level Gate (Vgs(th) max 1.2V @ 250μA)

Wide Operating Temperature Range: -55°C to 150°C

730mW Maximum Power Dissipation

Product Advantages

Compact surface mount package

Optimized for power management and switching applications

Excellent thermal performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

On-Resistance (Rds(on)): 35mOhm @ 6A, 4.5V

Continuous Drain Current (Id): 3.92A @ 25°C

Input Capacitance (Ciss): 1100pF @ 16V

Gate Charge (Qg): 20nC @ 4.5V

Gate Threshold Voltage (Vgs(th)): 1.2V @ 250μA

Operating Temperature Range: -55°C to 150°C

Power Dissipation: 730mW

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with a wide range of power management and switching applications

Application Areas

Power management

Switching circuits

Motor control

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Compact surface mount package

Optimized for power management and switching applications

Excellent thermal performance

Wide operating temperature range

Low on-resistance and high current handling capability

Suitable for a variety of industrial and consumer electronics applications