NTMD4N03R2G - onsemi

Manufacturer Part Number

NTMD4N03R2G

Manufacturer

onsemi

Introduction

The NTMD4N03R2G is a dual N-Channel MOSFET transistor designed for general-purpose switching and amplification applications.

Product Features and Performance

Dual N-Channel MOSFET configuration

Logic level gate drive

Low on-resistance of 60mΩ @ 4A, 10V

Continuous drain current of 4A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 400pF @ 20V

Compact 8-SOIC surface mount package

Product Advantages

Efficient power switching and amplification

High reliability and performance

Ease of integration in space-constrained designs

Suitable for a variety of applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

On-Resistance (Rds(on)): 60mΩ @ 4A, 10V

Input Capacitance (Ciss): 400pF @ 20V

Gate Charge (Qg): 16nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for use in harsh environments

Compatibility

The NTMD4N03R2G is a general-purpose dual N-Channel MOSFET that can be used in a wide range of applications.

Application Areas

Power management circuits

Switching and amplification in electronic devices

General-purpose switching and control applications

Product Lifecycle

The NTMD4N03R2G is an active product, and there are no immediate plans for discontinuation. Replacement or upgrade options may be available in the future as product roadmaps evolve.

Key Reasons to Choose This Product

Efficient and reliable power switching performance

Compact and space-saving design in an 8-SOIC package

Suitable for a wide range of applications

Proven reliability and quality from onsemi