NTMD4820NR2G - onsemi

Manufacturer Part Number

NTMD4820NR2G

Manufacturer

onsemi

Introduction

Dual N-Channel MOSFET with low on-resistance and logic-level gate designed for a variety of power management and switching applications.

Product Features and Performance

Dual N-Channel MOSFET design

Low on-resistance of 20mΩ @ 7.5A, 10V

Operating temperature range of -55°C to 150°C

Drain-to-source voltage (Vdss) of 30V

Continuous drain current (Id) of 4.9A @ 25°C

Input capacitance (Ciss) of 940pF @ 15V

Logic-level gate with a threshold voltage (Vgs(th)) of 3V @ 250μA

Gate charge (Qg) of 7.7nC @ 4.5V

Product Advantages

Excellent power efficiency due to low on-resistance

Suitable for a wide range of operating temperatures

Logic-level gate for easy control and integration

Space-saving 8-SOIC surface-mount package

Key Technical Parameters

Drain-to-source voltage (Vdss): 30V

On-resistance (Rds(on)): 20mΩ @ 7.5A, 10V

Continuous drain current (Id): 4.9A @ 25°C

Input capacitance (Ciss): 940pF @ 15V

Gate threshold voltage (Vgs(th)): 3V @ 250μA

Gate charge (Qg): 7.7nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Suitable for safety-critical applications

Compatibility

Surface-mount 8-SOIC package

Compatible with standard MOSFET drivers and control circuitry

Application Areas

Power management

Switching applications

Motor control

Industrial and consumer electronics

Product Lifecycle

Currently in active production

Availability of replacements and upgrades from onsemi

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Wide operating temperature range for versatile applications

Logic-level gate for easy integration and control

Compact 8-SOIC surface-mount package for space-constrained designs

RoHS3 compliance for use in safety-critical applications

Ongoing availability and support from onsemi