Manufacturer Part Number
NTMD4820NR2G
Manufacturer
onsemi
Introduction
Dual N-Channel MOSFET with low on-resistance and logic-level gate designed for a variety of power management and switching applications.
Product Features and Performance
Dual N-Channel MOSFET design
Low on-resistance of 20mΩ @ 7.5A, 10V
Operating temperature range of -55°C to 150°C
Drain-to-source voltage (Vdss) of 30V
Continuous drain current (Id) of 4.9A @ 25°C
Input capacitance (Ciss) of 940pF @ 15V
Logic-level gate with a threshold voltage (Vgs(th)) of 3V @ 250μA
Gate charge (Qg) of 7.7nC @ 4.5V
Product Advantages
Excellent power efficiency due to low on-resistance
Suitable for a wide range of operating temperatures
Logic-level gate for easy control and integration
Space-saving 8-SOIC surface-mount package
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
On-resistance (Rds(on)): 20mΩ @ 7.5A, 10V
Continuous drain current (Id): 4.9A @ 25°C
Input capacitance (Ciss): 940pF @ 15V
Gate threshold voltage (Vgs(th)): 3V @ 250μA
Gate charge (Qg): 7.7nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Surface-mount 8-SOIC package
Compatible with standard MOSFET drivers and control circuitry
Application Areas
Power management
Switching applications
Motor control
Industrial and consumer electronics
Product Lifecycle
Currently in active production
Availability of replacements and upgrades from onsemi
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Wide operating temperature range for versatile applications
Logic-level gate for easy integration and control
Compact 8-SOIC surface-mount package for space-constrained designs
RoHS3 compliance for use in safety-critical applications
Ongoing availability and support from onsemi
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