NTMD3P03R2G - onsemi

Manufacturer Part Number

NTMD3P03R2G

Manufacturer

onsemi

Introduction

The NTMD3P03R2G is a dual P-channel MOSFET from onsemi, designed for power management, switching, and control applications.

Product Features and Performance

2 P-Channel MOSFETs in a single package

Optimized for low on-resistance (RDS(on)) and fast switching

Capable of handling continuous drain current up to 2.34A at 25°C

Supports drain-to-source voltage up to 30V

Low gate charge (Qg) for efficient switching

Logic-level gate voltage (VGS(th)) of 2.5V

Product Advantages

Compact 8-SOIC surface mount package

Efficient power management through low RDS(on) and fast switching

Versatile for a wide range of power control and switching applications

Key Technical Parameters

RDS(on) of 85mΩ @ 3.05A, 10V

Input capacitance (Ciss) of 750pF @ 24V

Gate charge (Qg) of 25nC @ 10V

Operating temperature range of -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to onsemi's high quality standards

Compatibility

The NTMD3P03R2G is a dual P-channel MOSFET solution that can be used in a variety of power management and switching applications.

Application Areas

Power management and control circuits

Switching circuits

Motor control

Industrial and consumer electronics

Product Lifecycle

The NTMD3P03R2G is an active product from onsemi. Replacement or upgrade options may be available, but the specific lifecycle status should be verified with the manufacturer.

Key Reasons to Choose This Product

Efficient power management through low RDS(on) and fast switching

Versatile dual P-channel configuration in a compact 8-SOIC package

Reliable performance over a wide temperature range

Compliance with RoHS3 standards for environmentally-conscious design