NTMFD4C20NT1G - onsemi

Manufacturer Part Number

NTMFD4C20NT1G

Manufacturer

onsemi

Introduction

High-performance, low on-resistance N-channel MOSFET array in a small DFN (5mm x 6mm) package

Product Features and Performance

Dual N-channel MOSFET configuration

Low on-resistance of 7.3mΩ @ 10A, 10V

High continuous drain current of 9.1A or 13.7A

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 970pF @ 15V

Low gate charge of 9.3nC @ 4.5V

Product Advantages

Compact DFN package for space-saving designs

Low on-resistance for efficient power conversion

High current capability for demanding applications

Wide temperature range for versatile use

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Rds On (Max) @ Id, Vgs: 7.3mΩ @ 10A, 10V

Current Continuous Drain (Id) @ 25°C: 9.1A, 13.7A

Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V

Vgs(th) (Max) @ Id: 2.1V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Dual flag package design for improved thermal performance

Compatibility

Surface mount package

Application Areas

Power conversion and management

Motor control

Amplifier and switching circuits

General-purpose power switching

Product Lifecycle

This product is not nearing discontinuation. Replacement or upgrade options are available.

Key Reasons to Choose This Product

Compact DFN package for space-efficient designs

Low on-resistance for high efficiency power conversion

High current capability for demanding applications

Wide temperature range for versatile use

Reliable performance and safety features