Manufacturer Part Number
NTMFD4C20NT1G
Manufacturer
onsemi
Introduction
High-performance, low on-resistance N-channel MOSFET array in a small DFN (5mm x 6mm) package
Product Features and Performance
Dual N-channel MOSFET configuration
Low on-resistance of 7.3mΩ @ 10A, 10V
High continuous drain current of 9.1A or 13.7A
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 970pF @ 15V
Low gate charge of 9.3nC @ 4.5V
Product Advantages
Compact DFN package for space-saving designs
Low on-resistance for efficient power conversion
High current capability for demanding applications
Wide temperature range for versatile use
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 7.3mΩ @ 10A, 10V
Current Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Vgs(th) (Max) @ Id: 2.1V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Dual flag package design for improved thermal performance
Compatibility
Surface mount package
Application Areas
Power conversion and management
Motor control
Amplifier and switching circuits
General-purpose power switching
Product Lifecycle
This product is not nearing discontinuation. Replacement or upgrade options are available.
Key Reasons to Choose This Product
Compact DFN package for space-efficient designs
Low on-resistance for high efficiency power conversion
High current capability for demanding applications
Wide temperature range for versatile use
Reliable performance and safety features
