Manufacturer Part Number
NTMFD4C86NT1G
Manufacturer
onsemi
Introduction
Dual N-Channel asymmetrical power MOSFET in an 8-DFN (5x6) package
Product Features and Performance
Low on-resistance for high efficiency
Fast switching for high-frequency applications
Rugged design for reliable operation
Optimized for synchronous rectification and PWM applications
Product Advantages
Excellent thermal performance
Compact and space-saving package
High power density
Improved energy efficiency
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
On-resistance (Rds(on)): 5.4mΩ
Continuous Drain Current (Id): 11.3A, 18.1A
Input Capacitance (Ciss): 1153pF
Threshold Voltage (Vgs(th)): 2.2V
Gate Charge (Qg): 22.2nC
Quality and Safety Features
Qualified to AEC-Q101 standard for automotive applications
Robust design for reliable operation
Tested for electrostatic discharge (ESD) and latch-up protection
Compatibility
Suitable for a wide range of power management applications, including synchronous rectification, PWM, and power conversion
Application Areas
Switch-mode power supplies
Motor drives
Power inverters
Battery charging and management systems
Product Lifecycle
This product is currently in production and widely available
There are no immediate plans for discontinuation or replacement
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact and space-saving package
Robust and reliable design for critical applications
Versatile compatibility across various power management systems
Cost-effective solution for high-volume applications
