Manufacturer Part Number
NTMFD4C85NT1G
Manufacturer
onsemi
Introduction
Dual N-channel asymmetrical MOSFET in an 8-DFN (5x6) package
Product Features and Performance
Low on-resistance (RDS(on) = 3 mΩ)
High current capability (ID = 15.4 A, 29.7 A)
Fast switching speed
Low gate charge (Qg = 32 nC)
Wide operating temperature range (-55°C to 150°C)
Suitable for high-frequency, high-efficiency power conversion applications
Product Advantages
Efficient power delivery
Improved thermal management
Compact and space-saving design
Reliable performance
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30 V
On-Resistance (RDS(on)): 3 mΩ
Input Capacitance (Ciss): 1960 pF
Gate-to-Source Threshold Voltage (VGS(th)): 2.1 V
Quality and Safety Features
Robust design for reliable operation
Compliance with relevant safety standards
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Lighting applications
Industrial and consumer electronics
Product Lifecycle
This product is actively supported and not nearing discontinuation.
Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent power efficiency and thermal management
Compact and space-saving design
Reliable performance across a wide operating temperature range
Suitable for high-frequency, high-efficiency power conversion applications
Robust design and compliance with safety standards
