Manufacturer Part Number
NTMFD4C86NT3G
Manufacturer
onsemi
Introduction
This is a dual N-channel MOSFET transistor from onsemi, designed for use in various power management and switching applications.
Product Features and Performance
Operates in the temperature range of -55°C to 150°C
Maximum power dissipation of 1.1W
Asymmetrical configuration with 2 N-Channel MOSFETs
Drain-to-Source voltage (Vdss) of 30V
Low on-resistance (Rds(on)) of 5.4mΩ @ 30A, 10V
High continuous drain current (Id) of 11.3A at 25°C
Input capacitance (Ciss) of 1153pF @ 15V
Gate threshold voltage (Vgs(th)) of 2.2V @ 250A
Gate charge (Qg) of 22.2nC @ 10V
Product Advantages
Efficient power management due to low on-resistance
Suitable for a wide range of operating temperatures
High current handling capability
Compact 8-DFN (5x6) package for space-constrained applications
Key Technical Parameters
Manufacturer Part Number: NTMFD4C86NT3G
Package: 8-PowerTDFN, 8-DFN (5x6)
Mounting Type: Surface Mount
Package Type: Tape & Reel (TR)
Quality and Safety Features
Complies with industry standards for quality and safety
Produced using onsemi's reliable MOSFET manufacturing processes
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Switching circuits
Voltage regulators
Battery management systems
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Wide operating temperature range for versatile applications
High current handling capability for demanding power requirements
Compact package size for space-constrained designs
Reliable performance and quality backed by onsemi's manufacturing expertise
