Manufacturer Part Number
NTMFS008N12MCT1G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high current capacity
Product Features and Performance
Drain-to-source voltage (Vdss) of 120V
Maximum gate-to-source voltage (Vgs) of ±20V
Extremely low on-resistance (Rds(on)) of 8mΩ @ 36A, 10V
Continuous drain current (Id) of 12A at 25°C ambient, 79A at 25°C case temperature
Input capacitance (Ciss) of 2705pF @ 60V
Power dissipation of 2.7W at 25°C ambient, 102W at 25°C case temperature
Fast switching characteristics
Product Advantages
Excellent performance-to-size ratio
High power density
Suitable for high-current, high-efficiency applications
Key Technical Parameters
N-channel MOSFET transistor
Threshold voltage (Vgs(th)) of 4V @ 200A
Drive voltage range of 6V to 10V
Gate charge (Qg) of 33nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for surface mount applications
Application Areas
Suitable for high-current, high-efficiency power conversion and control applications, such as:
- Switch-mode power supplies
- Motor drives
- Inverters
- Converters
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements or upgrades may be available, but the specific details would need to be checked with the manufacturer.
Key Reasons to Choose This Product
Excellent performance-to-size ratio, enabling more compact and efficient designs
High continuous current rating and low on-resistance, improving system efficiency
Reliable and durable construction, ensuring long-term reliability
Wide operating temperature range, suitable for a variety of applications
RoHS3 compliance, meeting environmental regulations
