Manufacturer Part Number
NTMFS0D55N03CGT1G
Manufacturer
onsemi
Introduction
This is a discrete N-Channel MOSFET transistor from onsemi, suitable for power switching applications.
Product Features and Performance
30V Drain-Source Voltage (Vdss)
35A Continuous Drain Current (Id) at 25°C
58mΩ Max On-Resistance (Rdson) at 30A, 10V
Operating Temperature Range: -55°C to 175°C
Fast Switching Speeds
Low Gate Charge (Qg)
High Power Density
Product Advantages
Excellent thermal performance
Robust design for reliable operation
Optimized for high-frequency, high-efficiency power conversion
Compact package
Key Technical Parameters
N-Channel MOSFET
30V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
58mΩ Max On-Resistance (Rdson) at 30A, 10V
18,500pF Input Capacitance (Ciss) at 15V
9nC Gate Charge (Qg) at 10V
1W Power Dissipation at 25°C
Quality and Safety Features
RoHS3 Compliant
Halogen-free and lead-free
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options are available from onsemi.
Key Reasons to Choose This Product
Excellent thermal performance and reliability for demanding power applications
Optimized for high-frequency, high-efficiency power conversion
Compact package size for space-constrained designs
Proven onsemi quality and reliability