Manufacturer Part Number
NTMFS4119NT1G
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor
Designed for power management and control applications
Product Features and Performance
30V drain-to-source voltage (Vdss)
±20V gate-to-source voltage (Vgs)
5 milliohm maximum on-resistance (Rds(on))
11A continuous drain current (Id) at 25°C
4800 pF maximum input capacitance (Ciss)
900 mW maximum power dissipation (Ta)
60 nC maximum gate charge (Qg) at 4.5V
Product Advantages
Low on-resistance for high efficiency
High power density
Suitable for high-frequency switching applications
Key Technical Parameters
MOSFET technology
N-channel FET type
5V maximum threshold voltage (Vgs(th)) at 250A
5V to 10V recommended drive voltage range
Quality and Safety Features
-55°C to 150°C operating temperature range
Suitable for surface mount applications
Compatibility
Compatible with a variety of power management and control circuits
Application Areas
Power supplies
Motor drives
Switching regulators
Battery management systems
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
High efficiency due to low on-resistance
Compact surface mount package
Wide operating temperature range
Suitable for high-frequency switching applications
Proven MOSFET technology from a reliable manufacturer
