Manufacturer Part Number
NTMFS4821NT1G
Manufacturer
onsemi
Introduction
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) device
Product Features and Performance
N-Channel MOSFET
30V Drain-to-Source Voltage
±20V Gate-to-Source Voltage
95mOhm Maximum On-Resistance
8A Continuous Drain Current at 25°C Ambient
5A Continuous Drain Current at 25°C Case
1400pF Maximum Input Capacitance
870mW Power Dissipation at 25°C Ambient
5W Power Dissipation at 25°C Case
5V Maximum Gate Threshold Voltage
5V to 10V Drive Voltage Range
16nC Maximum Gate Charge
Product Advantages
High performance MOSFET with low on-resistance
Suitable for high-current, high-power applications
Efficient power management
Key Technical Parameters
30V Drain-to-Source Voltage
±20V Gate-to-Source Voltage
95mOhm Maximum On-Resistance
8A/58.5A Continuous Drain Current
1400pF Maximum Input Capacitance
870mW/38.5W Power Dissipation
Quality and Safety Features
ROHS3 Compliant
Operating Temperature Range: -55°C to 150°C
Compatibility
Surface Mount Packaging (5-DFN, 8-PowerTDFN)
Tape and Reel Packaging
Application Areas
Power management circuits
Motor control
Switching power supplies
Industrial electronics
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available
Reasons to Choose This Product
High performance MOSFET with low on-resistance
Suitable for high-current, high-power applications
Efficient power management
Wide operating temperature range
Surface mount and tape and reel packaging options
RoHS3 compliant
