Manufacturer Part Number
NTMFS4833NT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
30V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
2mOhm Max On-Resistance (Rds(on)) at 30A, 10V
16A Continuous Drain Current (Id) at 25°C (Ta)
156A Continuous Drain Current (Id) at 25°C (Tc)
5600pF Max Input Capacitance (Ciss) at 12V
910mW Power Dissipation at 25°C (Ta), 125W at 25°C (Tc)
5V Max Gate Threshold Voltage (Vgs(th)) at 250A
88nC Max Gate Charge (Qg) at 11.5V
Product Advantages
High current handling capability
Low on-resistance for improved efficiency
Small package size for compact design
Key Technical Parameters
N-Channel MOSFET Technology
30V Drain to Source Voltage (Vdss)
2mOhm Max On-Resistance (Rds(on))
16A Continuous Drain Current (Id) at 25°C (Ta)
-55°C to 150°C Operating Temperature Range
Quality and Safety Features
RoHS3 Compliant
5-DFN (5x6) (8-SOFL) Package
Tape & Reel Packaging
Compatibility
Surface Mount Mounting Type
Application Areas
Switching Power Supplies
Motor Drives
Battery Management Systems
Industrial Electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Compact package size for space-constrained designs
Wide operating temperature range for industrial and automotive applications
RoHS3 compliance for environmentally-friendly applications
Availability of replacements and upgrades to support long-term product lifecycle