NTJS4151PT1G - onsemi

Manufacturer Part Number

NTJS4151PT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

P-Channel MOSFET

Drain to Source Voltage (Vdss): 20V

Vgs (Max): ±12V

Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V

Continuous Drain Current (Id) @ 25°C: 3.3A (Ta)

Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10V

Power Dissipation (Max): 1W (Ta)

Vgs(th) (Max) @ Id: 1.2V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5V

Product Advantages

Low on-resistance for high efficiency

High drain current capability

Suitable for power switching applications

Key Technical Parameters

MOSFET Technology

Surface Mount Packaging (SC-88/SC70-6/SOT-363)

Operating Temperature Range: -55°C to 150°C (TJ)

RoHS3 Compliant

Quality and Safety Features

Reliable performance in wide temperature range

Compliant with RoHS Directive

Compatibility

Compatible with various power supply and control circuits

Application Areas

Power switching

Power management

Motor control

Industrial and consumer electronics

Product Lifecycle

Current product, no discontinuation planned

Replacements and upgrades available as technology advances

Key Reasons to Choose This Product

High efficiency and performance

Robust design for reliable operation

Wide temperature range suitability

Compliance with industry safety standards

Availability of compatible replacements and upgrades