Manufacturer Part Number
NTJD5121NT1G
Manufacturer
onsemi
Introduction
Dual N-channel MOSFET with logic-level gate
Ideal for low-power switching applications
Product Features and Performance
60V drain-source voltage (Vdss)
6Ω maximum on-resistance (Rds(on))
295mA continuous drain current (ID) at 25°C
26pF maximum input capacitance (Ciss)
9nC maximum gate charge (Qg)
Product Advantages
Logic-level gate for easy drive
Small package options for space-constrained designs
Low on-resistance for efficient switching
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
On-Resistance (Rds(on)): 1.6Ω @ 500mA, 10V
Continuous Drain Current (ID): 295mA @ 25°C
Input Capacitance (Ciss): 26pF @ 20V
Gate Charge (Qg): 0.9nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Designed for reliable performance in industrial and automotive applications
Compatibility
Surface mount packages: SC-88/SC70-6/SOT-363
Suitable for a variety of low-power switching circuits
Application Areas
Low-power switching applications
Power management circuits
Automotive electronics
Industrial control systems
Product Lifecycle
Current product offering
Replacements or upgrades may be available as technology evolves
Key Reasons to Choose This Product
Logic-level gate for easy implementation
Compact packaging options
Low on-resistance for efficient switching
Robust design for industrial and automotive use
Proven reliability and performance from onsemi
NTJS4151PT1G MOSAMI Semiconductor/onsemi