NTJS3157NT1G - onsemi

Manufacturer Part Number

NTJS3157NT1G

Manufacturer

onsemi

Introduction

High-voltage, high-performance N-channel MOSFET

Product Features and Performance

Optimized for high-frequency, high-voltage applications

Low on-resistance for high efficiency

Fast switching speed

Guaranteed on-state resistance at high current

Product Advantages

Excellent thermal performance

High reliability and ruggedness

Optimized for high-frequency, high-voltage applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 20 V

Vgs (Max): ±8 V

Rds On (Max) @ Id, Vgs: 60 mΩ @ 4 A, 4.5 V

Current Continuous Drain (Id) @ 25°C: 3.2 A

Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V

Power Dissipation (Max): 1 W

Vgs(th) (Max) @ Id: 1 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 1.8 V, 4.5 V

Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V

Quality and Safety Features

RoHS3 compliant

Meets high-reliability and safety standards

Compatibility

Surface mount package: SC-88/SC70-6/SOT-363

Application Areas

High-frequency, high-voltage applications

Power supplies

Motor drives

Lighting control

Industrial automation

Product Lifecycle

Currently available

No plans for discontinuation

Key Reasons to Choose This Product

Excellent thermal performance and high reliability

Optimized for high-frequency, high-voltage applications

Low on-resistance for high efficiency

Fast switching speed

Guaranteed on-state resistance at high current