NTJD5121NT2G - onsemi

Manufacturer Part Number

NTJD5121NT2G

Manufacturer

onsemi

Introduction

Dual N-channel power MOSFET

Product Features and Performance

60V drain-to-source voltage

6Ω maximum on-resistance

295mA continuous drain current at 25°C

26pF maximum input capacitance

Logic-level gate

5V maximum gate-to-source threshold voltage

9nC maximum gate charge

Product Advantages

Compact surface mount package

Suitable for low-power switching applications

Excellent thermal performance

Key Technical Parameters

Drain-to-source voltage: 60V

On-resistance: 1.6Ω

Drain current: 295mA

Input capacitance: 26pF

Gate-to-source threshold voltage: 2.5V

Gate charge: 0.9nC

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Compatible with various surface mount packages (SC-88, SOT-363)

Application Areas

Low-power switching circuits

Motor control

Power management

General purpose amplification and switching

Product Lifecycle

Currently in production

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Compact surface mount package

Excellent thermal performance

Suitable for low-power switching applications

Reliable and RoHS3 compliant

Compatible with various surface mount packages