NTJS3151PT1G - onsemi

Manufacturer Part Number

NTJS3151PT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

ROHS3 Compliant

SC-88/SC70-6/SOT-363 Packaging

Operating Temperature: -55°C to 150°C (TJ)

Drain to Source Voltage (Vdss): 12V

Vgs (Max): ±12V

Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V

MOSFET (Metal Oxide) Technology

Current Continuous Drain (Id) @ 25°C: 2.7A (Ta)

Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12V

Power Dissipation (Max): 625mW (Ta)

P-Channel FET Type

Vgs(th) (Max) @ Id: 1.2V @ 100A

Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5V

Product Advantages

ROHS3 Compliant

Wide Operating Temperature Range

Low On-Resistance

High Current Handling Capability

Low Input Capacitance

Key Technical Parameters

Drain to Source Voltage (Vdss): 12V

Continuous Drain Current (Id): 2.7A

On-Resistance (Rds(on)): 60mOhm

Input Capacitance (Ciss): 850pF

Quality and Safety Features

ROHS3 Compliant

Compatibility

Surface Mount Mounting Type

Application Areas

Suitable for various electronic circuit designs requiring P-Channel MOSFET transistors

Product Lifecycle

Active product, no discontinuation plans known

Key Reasons to Choose This Product

Wide operating temperature range

Low on-resistance for efficient power handling

High current capability

Low input capacitance for fast switching

ROHS3 compliant for environmental safety