Manufacturer Part Number
NTJD4401NT1
Manufacturer
onsemi
Introduction
Dual N-Channel MOSFET transistor
Product Features and Performance
20V drain-to-source voltage
375mΩ maximum on-resistance
630mA continuous drain current
46pF maximum input capacitance
3nC maximum gate charge
Logic-level gate voltage
Product Advantages
Compact surface mount package
Suitable for low-power applications
Excellent thermal performance
Reliable and durable construction
Key Technical Parameters
Drain-to-source voltage (Vdss): 20V
On-resistance (Rds(on)): 375mΩ
Continuous drain current (Id): 630mA
Input capacitance (Ciss): 46pF
Gate charge (Qg): 3nC
Quality and Safety Features
RoHS non-compliant
Operating temperature range: -55°C to 150°C
Compatibility
SC-88/SC70-6/SOT-363 package
Application Areas
Low-power electronics
Power management circuits
Switching applications
General purpose amplification
Product Lifecycle
Active and available
No known plans for discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Compact and space-efficient package
Excellent thermal performance for reliable operation
Suitable for low-power applications
Proven reliability and durability
Broad operating temperature range
NTJD4152PAMI Semiconductor/onsemi