Manufacturer Part Number
NTJD4152PT1G
Manufacturer
onsemi
Introduction
Dual P-channel MOSFET array
Product Features and Performance
2 P-Channel MOSFETs in a single package
Low on-resistance (260mΩ max)
High current capability (880mA continuous)
Logic level gate drive
Low input capacitance (155pF max)
Low gate charge (2.2nC max)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Space-saving dual MOSFET design
High efficiency due to low on-resistance
Allows for simple circuit design with logic level gate drive
Reliable performance across wide temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 260mΩ max
Continuous Drain Current (Id): 880mA
Input Capacitance (Ciss): 155pF max
Gate Charge (Qg): 2.2nC max
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Robust SC-88/SC70-6/SOT-363 package
Compatibility
Compatible with standard surface mount assembly processes
Application Areas
Suitable for use in power management, switching, and driver circuits
Applicable in consumer electronics, industrial, and automotive applications
Product Lifecycle
Current production part, no discontinuation planned
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Space-efficient dual MOSFET design
Low on-resistance for high efficiency
Logic level gate drive for simplified circuit design
Wide operating temperature range for reliable performance
RoHS3 compliance for environmental responsibility
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