Manufacturer Part Number
NTJD4105CT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
ROHS3 Compliant
Surface Mount Mounting Type
N and P-Channel Configuration
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
Operating Temperature: -55°C ~ 150°C (TJ)
Power Max: 270mW
Drain to Source Voltage (Vdss): 20V, 8V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Current Continuous Drain (Id) @ 25°C: 630mA, 775mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Product Advantages
ROHS3 Compliant
Logic Level Gate FET Feature
Wide Operating Temperature Range
Key Technical Parameters
Drain to Source Voltage (Vdss)
Rds On (Max) @ Id, Vgs
Current Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Mounting Type
Manufacturer's packaging: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Package: Tape & Reel (TR)
Application Areas
Discrete Semiconductor Applications
Transistors FETs, MOSFETs Arrays Applications
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Key Reasons to Choose This Product
ROHS3 Compliant
Logic Level Gate FET Feature
Wide Operating Temperature Range
Detailed Technical Specifications