Manufacturer Part Number
NTJD4001NT1G
Manufacturer
onsemi
Introduction
Dual N-Channel MOSFET transistor
Product Features and Performance
Drain to Source Voltage (Vdss) of 30V
Rds On (Max) of 1.5Ω @ 10mA, 4V
Continuous Drain Current (Id) of 250mA @ 25°C
Input Capacitance (Ciss) of 33pF @ 5V
Gate Threshold Voltage (Vgs(th)) of 1.5V @ 100μA
Gate Charge (Qg) of 1.3nC @ 5V
Product Advantages
Low on-resistance for high efficiency
Compact surface mount package
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology
2 N-Channel configuration
6-TSSOP, SC-88, SOT-363 package
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for various electronic applications requiring dual N-Channel MOSFET transistors
Application Areas
Power management
Switching circuits
Motor control
Audio amplifiers
General purpose electronics
Product Lifecycle
Currently in production
Replacement or upgraded models may be available in the future
Key Reasons to Choose This Product
Low on-resistance for high efficiency
Compact surface mount package
Wide operating temperature range
Suitable for various electronic applications
NTJD4001NAMI Semiconductor/onsemi