Manufacturer Part Number
NTJD2152PT1G
Manufacturer
onsemi
Introduction
Dual P-Channel MOSFET
Product Features and Performance
Dual P-Channel MOSFET
Logic Level Gate
Low RDS(on)
Low gate charge
High drain current capability
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Efficient power management
Reliable performance
Compact and space-saving design
Key Technical Parameters
Drain to Source Voltage (Vdss): 8V
RDS(on) (Max) @ Id, Vgs: 300mOhm @ 570mA, 4.5V
Continuous Drain Current (Id) @ 25°C: 775mA
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
Gate Threshold Voltage (Vgs(th)) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Quality and Safety Features
Robust design for reliable operation
Compliance with industry safety standards
Compatibility
Compatible with a wide range of electronic systems and applications
Application Areas
Power management circuits
Switching circuits
Battery-powered devices
Portable electronics
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available as technology evolves
Several Key Reasons to Choose This Product
Efficient power management through low RDS(on) and gate charge
Reliable performance across a wide temperature range
Compact and space-saving design for versatile integration
Robust quality and safety features for dependable operation
Compatibility with a broad range of electronic applications
NTJD4001NAMI Semiconductor/onsemi