Manufacturer Part Number
NTHD4102PT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
ROHS3 Compliant
ChipFET Packaging
Operating Temperature: -55°C to 150°C
Power Rating: 1.1W
2 P-Channel (Dual) Configuration
Drain to Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 80mOhm @ 2.9A, 4.5V
MOSFET (Metal Oxide) Technology
Continuous Drain Current (Id): 2.9A @ 25°C
Input Capacitance (Ciss): 750pF @ 16V
Logic Level Gate
Gate Threshold Voltage (Vgs(th)): 1.5V @ 250A
Gate Charge (Qg): 8.6nC @ 4.5V
Surface Mount Mounting
Product Advantages
Compact ChipFET Packaging
Wide Operating Temperature Range
Low On-Resistance for Efficient Power Handling
Logic Level Gate for Easy Integration
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 80mOhm
Continuous Drain Current (Id): 2.9A
Input Capacitance (Ciss): 750pF
Gate Threshold Voltage (Vgs(th)): 1.5V
Gate Charge (Qg): 8.6nC
Quality and Safety Features
ROHS3 Compliant
Compatibility
Compatible with a wide range of electronic circuits and systems requiring dual P-channel MOSFET devices
Application Areas
Suitable for various power management, switching, and control applications in electronic devices and systems
Product Lifecycle
This product is currently available and actively supported by the manufacturer.
Key Reasons to Choose This Product
Compact ChipFET packaging for space-constrained designs
Wide operating temperature range for harsh environments
Low on-resistance for efficient power handling
Logic level gate for easy integration with control circuitry
Robust ROHS3 compliant construction for reliable performance