Manufacturer Part Number
NTHD3101FT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET with Schottky Diode
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 80mΩ @ 3.2A, 4.5V
Continuous Drain Current (Id): 3.2A @ 25°C
Input Capacitance (Ciss): 680pF @ 10V
Power Dissipation: 1.1W
Threshold Voltage (Vgs(th)): 1.5V @ 250μA
Gate Charge (Qg): 7.4nC @ 4.5V
Operating Temperature: -55°C to 150°C
Product Advantages
Schottky Diode for fast switching
Low on-resistance for efficient power conversion
High current handling capability
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 80mΩ
Continuous Drain Current (Id): 3.2A
Input Capacitance (Ciss): 680pF
Power Dissipation: 1.1W
Threshold Voltage (Vgs(th)): 1.5V
Gate Charge (Qg): 7.4nC
Quality and Safety Features
RoHS3 compliant
Reliable Schottky diode design
Compatibility
Surface mount package (8-SMD, Flat Lead)
Tape and Reel (TR) packaging
Application Areas
Power conversion
Motor control
Switching circuits
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
Low on-resistance for efficient power conversion
High current handling capability
Reliable Schottky diode design
RoHS3 compliant
Suitable for a variety of power conversion and control applications