NTHD2102PT1 - onsemi

Manufacturer Part Number

NTHD2102PT1

Manufacturer

onsemi

Introduction

The NTHD2102PT1 is a dual P-channel MOSFET device from onsemi, designed for a variety of power management and switching applications.

Product Features and Performance

Dual P-channel MOSFET configuration

Operating temperature range of -55°C to 150°C

Maximum power dissipation of 1.1W

Drain-to-source voltage (Vdss) of 8V

Low on-resistance (Rds(on)) of 58mΩ @ 3.4A, 4.5V

High input capacitance (Ciss) of 715pF @ 6.4V

Logic level gate with a maximum gate-to-source threshold voltage (Vgs(th)) of 1.5V @ 250μA

Maximum gate charge (Qg) of 16nC @ 2.5V

Product Advantages

Efficient power management and switching performance

Wide operating temperature range

Compact surface mount package

Key Technical Parameters

Drain-to-source voltage (Vdss): 8V

On-resistance (Rds(on)): 58mΩ @ 3.4A, 4.5V

Input capacitance (Ciss): 715pF @ 6.4V

Gate-to-source threshold voltage (Vgs(th)): 1.5V @ 250μA

Gate charge (Qg): 16nC @ 2.5V

Quality and Safety Features

RoHS non-compliant

Compatibility

Surface mount package (8-SMD, Flat Lead)

Tape and reel packaging

Application Areas

Power management

Switching applications

General-purpose power electronics

Product Lifecycle

The NTHD2102PT1 is an active product in onsemi's portfolio.

Replacement or upgrade options may be available, but specific details are not provided.

Several Key Reasons to Choose This Product

Efficient power management and switching performance

Wide operating temperature range of -55°C to 150°C

Compact surface mount package for space-constrained designs

Dual P-channel MOSFET configuration for versatile power control