NTHD2102PT1G - onsemi

Manufacturer Part Number

NTHD2102PT1G

Manufacturer

onsemi

Introduction

Dual P-Channel MOSFET in ChipFET package for power management applications

Product Features and Performance

2 P-Channel MOSFET devices in a single package

Low on-resistance (58 mΩ max)

High continuous drain current (3.4 A)

Logic level gate (1.5 V max gate threshold)

Wide operating temperature range (-55°C to 150°C)

Low input capacitance (715 pF max)

Fast switching speed

Product Advantages

Space-saving ChipFET package

Balanced thermal performance

Reliable power management

Efficient power conversion

Key Technical Parameters

Drain-Source Voltage (Vdss): 8 V

On-Resistance (Rds(on)): 58 mΩ max

Drain Current (Id): 3.4 A

Input Capacitance (Ciss): 715 pF max

Gate Threshold Voltage (Vgs(th)): 1.5 V max

Gate Charge (Qg): 16 nC max

Quality and Safety Features

AEC-Q101 qualified for automotive applications

Moisture Sensitivity Level (MSL): 1 (unlimited floor life)

RoHS compliant

Compatibility

Compatible with various power management and control applications

Application Areas

Power management

Motor control

Battery charging

DC-DC conversion

General-purpose switching

Product Lifecycle

Current production

No known discontinuation plans

Replacements and upgrades available as technology evolves

Key Reasons to Choose This Product

Compact ChipFET package for space-constrained designs

Low on-resistance and high current capability for efficient power handling

Logic level gate for easy microcontroller integration

Wide temperature range for use in diverse environments

Reliable performance and quality for critical applications