NTHD3100CT1G - onsemi

Manufacturer Part Number

NTHD3100CT1G

Manufacturer

onsemi

Introduction

NTHD3100CT1G is a dual N-Channel and P-Channel MOSFET transistor array in a ChipFET package.

Product Features and Performance

20V Drain-Source Voltage

80mΩ maximum on-resistance

9A continuous drain current at 25°C

165pF maximum input capacitance

2V maximum gate threshold voltage

3nC maximum gate charge

Product Advantages

Compact ChipFET package

Logic level gate

Wide temperature range of -55°C to 150°C

High power handling capability

Key Technical Parameters

Configuration: N and P-Channel

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V

Current Continuous Drain (Id) @ 25°C: 2.9A, 3.2A

Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V

Vgs(th) (Max) @ Id: 1.2V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Wide operating temperature range of -55°C to 150°C

Compatibility

Surface mount package

Application Areas

Power management

Switching circuits

Motor control

Industrial and consumer electronics

Product Lifecycle

This product is actively available and supported by the manufacturer.

Key Reasons to Choose This Product

Compact ChipFET package

High power handling capability

Wide temperature range

Logic level gate for easy interface

RoHS3 compliance for environmental safety