NTHC5513T1G - onsemi

Manufacturer Part Number

NTHC5513T1G

Manufacturer

onsemi

Introduction

N-Channel and P-Channel MOSFET Array in ChipFET Package

Product Features and Performance

-55°C to 150°C Operating Temperature Range

1W Max Power Dissipation

20V Drain-to-Source Voltage

80mOhm Maximum On-Resistance

9A/2.2A Continuous Drain Current

180pF Input Capacitance

Logic Level Gate

Product Advantages

Compact ChipFET package

Wide temperature range

Low on-resistance

Key Technical Parameters

Configuration: N and P-Channel MOSFET

Drain-to-Source Voltage (Vdss): 20V

On-Resistance (Rds(on)): 80mOhm @ 2.9A, 4.5V

Continuous Drain Current (Id): 2.9A @ 25°C, 2.2A

Input Capacitance (Ciss): 180pF @ 10V

Gate Threshold Voltage (Vgs(th)): 1.2V @ 250µA

Gate Charge (Qg): 4nC @ 4.5V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting Type

Tape & Reel Packaging

Application Areas

General-purpose switching

Power management

Motor control

Product Lifecycle

Current production, no indication of discontinuation

Key Reasons to Choose This Product

Wide operating temperature range

Low on-resistance for efficient power switching

Compact ChipFET package for space-constrained designs

RoHS3 compliance for environmentally-conscious applications