Manufacturer Part Number
NTHD3102CT1G
Manufacturer
onsemi
Introduction
This is a dual N-Channel and P-Channel MOSFET transistor array product from onsemi.
Product Features and Performance
N and P-Channel MOSFET configuration
20V drain-to-source voltage rating
Low on-resistance of 45 milliohms
Continuous drain current up to 4A per channel
High input capacitance of 510pF
Logic level gate threshold voltage of 1.2V
Gate charge of 7.9nC at 4.5V
Operating temperature range of -55°C to 150°C
Maximum power dissipation of 1.1W
Product Advantages
Compact surface mount ChipFET package
Dual N and P-Channel MOSFETs in a single package
Excellent thermal performance and power handling
Suitable for space-constrained applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 45 milliohms
Continuous Drain Current (Id): 4A, 3.1A
Input Capacitance (Ciss): 510pF
Gate-to-Source Threshold Voltage (Vgs(th)): 1.2V
Gate Charge (Qg): 7.9nC
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Surface mount ChipFET package
Tape and reel packaging
Application Areas
Power management circuits
Motor control
Industrial automation
Telecommunications equipment
Consumer electronics
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
Compact and efficient dual MOSFET solution
Excellent thermal performance and power handling
Suitable for space-constrained applications
Robust and reliable design
RoHS compliance for environmentally-friendly use
NTHD3102CT1AMI Semiconductor/onsemi