NTHD4508NT1G - onsemi

Manufacturer Part Number

NTHD4508NT1G

Manufacturer

onsemi

Introduction

The NTHD4508NT1G is a dual N-Channel MOSFET device in a ChipFET package, designed for a wide range of power management and control applications.

Product Features and Performance

Dual N-Channel MOSFET configuration

Low on-resistance (Rds(on)) of 75mΩ @ 3.1A, 4.5V

High continuous drain current rating of 3A

Low input capacitance of 180pF @ 10V

Logic-level gate voltage (Vgs(th) of 1.2V @ 250μA)

Low gate charge of 4nC @ 4.5V

Operating temperature range of -55°C to 150°C

Product Advantages

Efficient power management and control

Compact and space-saving ChipFET package

Suitable for a wide range of applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Continuous Drain Current (Id): 3A

On-Resistance (Rds(on)): 75mΩ @ 3.1A, 4.5V

Input Capacitance (Ciss): 180pF @ 10V

Gate Threshold Voltage (Vgs(th)): 1.2V @ 250μA

Gate Charge (Qg): 4nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Compatible with a wide range of power management and control circuits

Application Areas

Power management circuits

Motor control

Lighting control

Industrial and consumer electronics

Product Lifecycle

Currently available

No immediate plans for discontinuation

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Efficient power management and control

Compact and space-saving ChipFET package

Suitable for a wide range of applications

Reliable and RoHS3 compliant

Excellent technical performance with low on-resistance, high current rating, and low input capacitance