Manufacturer Part Number
NTHD4P02FT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
Schottky Diode (Isolated)
High current handling capability up to 2.2A
Low on-resistance of 155mΩ
Wide operating temperature range of -55°C to 150°C
Product Advantages
High power efficiency
Compact ChipFET package
Suitable for various power conversion and control applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs Max): ±12V
Input Capacitance (Ciss): 300pF
Power Dissipation (Max): 1.1W
Gate Charge (Qg): 6nC
Quality and Safety Features
RoHS3 compliant
Reliable surface mount design
Compatibility
Suitable for various power conversion and control applications
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Compact ChipFET package for space-saving design
RoHS3 compliance for environmental considerations
Reliable surface mount design for robust performance