Manufacturer Part Number
NTHD5904NT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
Surface Mount Packaging (ChipFET)
Operating Temperature Range: -55°C to 150°C
Drain-to-Source Voltage (Vdss): 20V
Maximum Gate-to-Source Voltage (Vgs): ±8V
Typical On-Resistance (Rds(on)): 65mΩ @ 3.3A, 4.5V
MOSFET Technology
Maximum Continuous Drain Current (Id): 2.5A @ 25°C
Input Capacitance (Ciss): 465pF @ 16V
Maximum Power Dissipation: 640mW
N-Channel FET
Threshold Voltage (Vgs(th)): 1.2V @ 250μA
Drive Voltage Range: 2.5V to 4.5V
Maximum Gate Charge (Qg): 6nC @ 4.5V
Product Advantages
Surface Mount Packaging for Compact Design
Low On-Resistance for Efficient Power Conversion
Wide Operating Temperature Range
Suitable for Various Power Management Applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss)
Gate-to-Source Voltage (Vgs)
On-Resistance (Rds(on))
Drain Current (Id)
Input Capacitance (Ciss)
Power Dissipation
Threshold Voltage (Vgs(th))
Gate Charge (Qg)
Quality and Safety Features
Compliant with RoHS and other environmental directives
Strict quality control and testing processes
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Switch-Mode Power Supplies (SMPS)
Motor Drives
Battery Chargers
DC-DC Converters
Power Amplifiers
Product Lifecycle
Currently in active production
Replacements and upgrades available as needed
Key Reasons to Choose This Product
High efficiency and low power loss due to low on-resistance
Compact surface mount package for space-constrained designs
Wide operating temperature range for versatile applications
Reliable and high-quality performance backed by onsemi
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