Manufacturer Part Number
NTHL040N120SC1
Manufacturer
onsemi
Introduction
High-performance silicon carbide (SiC) MOSFET transistor
Suitable for high-voltage, high-power applications
Product Features and Performance
Drain-to-source voltage (Vdss) of 1200 V
Continuous drain current (ID) of 60 A at 25°C
Low on-resistance (RDS(on)) of 56 mΩ at 35 A, 20 V
Fast switching capabilities with low gate charge (Qg) of 106 nC at 20 V
Wide operating temperature range of -55°C to 175°C
Product Advantages
Superior efficiency and performance compared to silicon-based MOSFETs
Reduced power losses and improved system reliability
Enables compact, high-density power conversion designs
Key Technical Parameters
Technology: SiCFET (Silicon Carbide MOSFET)
FET Type: N-Channel
Threshold voltage (Vgs(th)): 4.3 V at 10 mA
Input capacitance (Ciss): 1781 pF at 800 V
Power dissipation (Pd): 348 W at case temperature (Tc)
Quality and Safety Features
RoHS3 compliant
Meets industrial-grade quality and reliability standards
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Electric vehicles
Renewable energy systems
Product Lifecycle
Current production model, no indication of discontinuation
Replacements and upgrades may be available as technology evolves
Key Reasons to Choose This Product
Superior efficiency and performance compared to silicon-based MOSFETs
Enables compact, high-density power conversion designs
Proven reliability and quality for industrial-grade applications
Broad compatibility with various high-voltage, high-power systems
