Manufacturer Part Number
NTHD4N02FT1G
Manufacturer
onsemi
Introduction
Discrete semiconductor product
Single N-channel MOSFET transistor
Product Features and Performance
Drain-Source Voltage (Vdss): 20 V
Gate-Source Voltage (Vgs): ±12 V
On-State Resistance (Rds(on)): 80 mΩ @ 2.9 A, 4.5 V
Continuous Drain Current (Id): 2.9 A @ 25°C
Input Capacitance (Ciss): 300 pF @ 10 V
Schottky Diode (Isolated)
Power Dissipation: 910 mW
Product Advantages
Low on-state resistance
Fast switching speed
Isolated Schottky diode
Key Technical Parameters
MOSFET Technology
N-Channel
Threshold Voltage (Vgs(th)): 1.2 V @ 250 μA
Drive Voltage (Rds(on) Max, Min): 2.5 V, 4.5 V
Gate Charge (Qg): 4 nC @ 4.5 V
Quality and Safety Features
Operating Temperature: -55°C to 150°C
Compatibility
Surface Mount Packaging (8-SMD, Flat Lead)
Tape & Reel (TR) Packaging
Application Areas
Power management circuits
Switching circuits
Motor control
Industrial and consumer electronics
Product Lifecycle
Current product
Replacement or upgrade options available
Key Reasons to Choose
Excellent performance characteristics
Low on-state resistance
Fast switching speed
Isolated Schottky diode
Suitable for a wide range of applications