Manufacturer Part Number
NTHD4502NT1G
Manufacturer
onsemi
Introduction
The NTHD4502NT1G is a dual N-channel MOSFET device from onsemi, designed for power management and switching applications.
Product Features and Performance
2 N-Channel MOSFET transistors in a single package
30V Drain-Source Voltage (Vdss)
85mOhm Rds(on) at 2.9A, 10V
2A Continuous Drain Current (Id) at 25°C
140pF Input Capacitance (Ciss) at 15V
7nC Gate Charge (Qg) at 10V
Logic Level Gate with 3V Threshold Voltage (Vgs(th))
Operating Temperature Range: -55°C to 150°C
Product Advantages
Compact ChipFET package for space-saving designs
Dual MOSFET configuration for efficient power management
Low on-resistance for improved efficiency
Suitable for a wide range of power management and switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Rds(on) (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Continuous Drain Current (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for Tape and Reel packaging
Compatibility
Surface mount package (8-SMD, Flat Lead)
Application Areas
Power management
Switching applications
Industrial and consumer electronics
Product Lifecycle
Current production status
Availability of replacements or upgrades may vary, check with manufacturer
Key Reasons to Choose This Product
Dual MOSFET configuration for efficient power management
Low on-resistance for improved efficiency
Wide operating temperature range (-55°C to 150°C)
Compact ChipFET package for space-saving designs
RoHS3 compliance for environmental safety
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