Manufacturer Part Number
NSL12AWT1G
Manufacturer
onsemi
Introduction
The NSL12AWT1G is a discrete semiconductor product, specifically a PNP bipolar junction transistor (BJT).
Product Features and Performance
High current capacity of up to 2A
Wide operating temperature range of -55°C to 150°C
Frequency transition of 100MHz
Low collector-emitter saturation voltage (VCE(sat)) of 290mV at 20mA, 1A
Minimum DC current gain (hFE) of 100 at 800mA, 1.5V
Product Advantages
Efficient and reliable power handling
Suitable for a wide range of temperature conditions
Fast switching capabilities
Low power loss
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 12V
Collector Cutoff Current (ICBO): 100nA
Power Dissipation: 450mW
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Package: 6-TSSOP, SC-88, SOT-363
Application Areas
Power amplifiers
Switching circuits
Automotive electronics
Industrial control systems
Product Lifecycle
Current product offering
Availability of replacement or upgraded models unknown
Key Reasons to Choose This Product
High-performance PNP BJT with excellent power handling and switching capabilities
Wide temperature range and low power loss make it suitable for diverse applications
Reliable and efficient performance in a compact surface mount package