BSS63LT1G - onsemi

Manufacturer Part Number

BSS63LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

RoHS3 Compliant

SOT-23-3 (TO-236) Package

Operating Temperature Range: -55°C to 150°C

Power Rating: 225 mW

Collector-Emitter Breakdown Voltage (Max): 100 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 100 nA

Collector-Emitter Saturation Voltage (Max): 250 mV @ 2.5 mA, 25 mA

Transistor Type: PNP

DC Current Gain (hFE) (Min): 30 @ 25 mA, 1 V

Transition Frequency: 95 MHz

Surface Mount Packaging

Product Advantages

High Voltage Capability

Low Collector Cutoff Current

Fast Switching Speed

Compact Surface Mount Package

Key Technical Parameters

Collector-Emitter Breakdown Voltage

Collector Current

Collector Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Gain

Transition Frequency

Quality and Safety Features

RoHS3 Compliant

Operating Temperature Range Suitable for Industrial and Automotive Applications

Compatibility

Suitable for Surface Mount Applications

Application Areas

Industrial Electronics

Automotive Electronics

Power Supplies

Switching Circuits

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades available

Key Reasons to Choose

High voltage capability for reliable operation

Low collector cutoff current for efficient performance

Fast switching speed for high-speed applications

Compact surface mount package for space-constrained designs