BSS316NH6327XTSA1 - Infineon Technologies

Manufacturer Part Number

BSS316NH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

Drain to Source Voltage (Vdss): 30V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V

Current Continuous Drain (Id) @ 25°C: 1.4A (Ta)

Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V

Power Dissipation (Max): 500mW (Ta)

Vgs(th) (Max) @ Id: 2V @ 3.7A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V

Product Advantages

High efficiency

Low on-resistance

Fast switching

Reliable performance

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

Package / Case: TO-236-3, SC-59, SOT-23-3

Supplier Device Package: PG-SOT23

Series: OptiMOS

Package: Tape & Reel (TR)

Application Areas

Suitable for use in a variety of electronic devices and circuits

Product Lifecycle

Currently available

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

High efficiency and low on-resistance for improved performance

Fast switching for efficient power management

Reliable and durable performance

Compatibility with a wide range of electronic devices and circuits

RoHS compliance for environmental friendliness