BSS606NH6327 - Infineon Technologies

Manufacturer Part Number

BSS606NH6327

Manufacturer

Infineon Technologies

Introduction

The BSS606NH6327 is a high-performance, N-channel MOSFET transistor from Infineon Technologies, designed for a wide range of power management and switching applications.

Product Features and Performance

Low on-resistance (Rds(on)) of 60 mOhm at 3.2A, 10V

Operating temperature range of -55°C to 150°C

High drain-to-source voltage (Vdss) of 60V

Wide gate-to-source voltage (Vgs) range of ±20V

Low input capacitance (Ciss) of 657 pF at 25V

Continuous drain current (Id) of 3.2A at 25°C

Product Advantages

Excellent power efficiency due to low on-resistance

Wide operating temperature range for versatile applications

High voltage handling capability

Robust design for reliable performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 60 mOhm @ 3.2A, 10V

Continuous Drain Current (Id): 3.2A at 25°C

Input Capacitance (Ciss): 657 pF at 25V

Quality and Safety Features

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology

Surface mount package (PG-SOT89-4-2) for reliable connections

Compliant with industry safety standards

Compatibility

Widely compatible with various power management and switching applications

Application Areas

Power supplies

Motor drives

Switching circuits

Power management in consumer electronics

Industrial automation and control systems

Product Lifecycle

Currently in production

No immediate plans for discontinuation

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

High energy efficiency due to low on-resistance

Wide operating temperature range for versatile applications

Robust design for reliable performance

Compatibility with a wide range of power management and switching applications

Availability and support from a reputable manufacturer, Infineon Technologies