Manufacturer Part Number
BSS315PH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
The BSS315PH6327XTSA1 is a P-Channel MOSFET transistor from Infineon Technologies' OptiMOS series.
Product Features and Performance
P-Channel MOSFET structure
Drain-Source Voltage (VDS) up to 30V
Gate-Source Voltage (VGS) up to ±20V
Low on-resistance (RDS(on)) of 150mΩ @ 1.5A, 10V
Continuous Drain Current (ID) of 1.5A @ 25°C
Input Capacitance (Ciss) of 282pF @ 15V
Power Dissipation up to 500mW
Product Advantages
Optimized for efficient power switching
Low switching losses
Compact surface mount package
Key Technical Parameters
Manufacturer Part Number: BSS315PH6327XTSA1
Package: TO-236-3, SC-59, SOT-23-3
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: P-Channel
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 qualified
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and applications that require a P-Channel enhancement mode MOSFET.
Application Areas
Power management circuits
Switching regulators
Motor control
Battery charging and protection
General purpose switching
Product Lifecycle
The BSS315PH6327XTSA1 is an active product from Infineon Technologies. Replacement or upgrade options are available if required.
Key Reasons to Choose This Product
Optimized for efficient power switching with low on-resistance and switching losses
Compact surface mount package for space-constrained designs
Wide operating temperature range of -55°C to 150°C
RoHS3 compliant and AEC-Q101 qualified for reliable performance
Compatibility with a broad range of electronic circuits and applications
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