Manufacturer Part Number
BSS314PEH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
P-channel MOSFET transistor
Part of the OptiMOS series
Product Features and Performance
Drain to Source Voltage (Vdss) of 30V
Maximum Gate-Source Voltage (Vgs) of ±20V
On-State Resistance (Rds(on)) of 140mΩ @ 1.5A, 10V
Continuous Drain Current (Id) of 1.5A at 25°C
Input Capacitance (Ciss) of 294pF @ 15V
Power Dissipation (Max) of 500mW at 25°C
Product Advantages
Low on-state resistance for improved efficiency
Wide operating temperature range of -55°C to 150°C
Suitable for high-frequency switching applications
Key Technical Parameters
MOSFET technology
P-channel FET type
Threshold Voltage (Vgs(th)) of 2V @ 6.3A
Drive Voltage range of 4.5V to 10V
Gate Charge (Qg) of 2.9nC @ 10V
Quality and Safety Features
RoHS3 compliant
Packaged in a PG-SOT23 (TO-236-3, SC-59, SOT-23-3) surface mount package
Compatibility
Compatible with a wide range of electronic circuits and systems requiring a P-channel MOSFET
Application Areas
Suitable for use in power supplies, motor drives, and other high-frequency switching applications
Product Lifecycle
This product is currently in production and widely available
Replacement or upgraded parts may be available in the future as technology advances
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-state resistance and wide operating temperature range
Compact surface mount package for efficient board layout
RoHS compliance for environmentally-friendly applications
Proven reliability and performance of the Infineon OptiMOS series