Manufacturer Part Number
BSS64LT1G
Manufacturer
onsemi
Introduction
The BSS64LT1G is a small-signal NPN bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package. It is designed for use in a wide range of general-purpose amplifier and switching applications.
Product Features and Performance
NPN bipolar junction transistor
Compact SOT-23-3 (TO-236) package
High frequency of 60 MHz
Low collector-emitter saturation voltage of 200 mV
Wide operating temperature range of -55°C to 150°C
Product Advantages
Versatile and reliable performance in a small package
Suitable for various amplifier and switching applications
Excellent thermal management due to the SOT-23-3 package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 80 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 100 nA
DC Current Gain (Min): 20 @ 10 mA, 1 V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for efficient handling and assembly
Compatibility
This transistor is compatible with a wide range of electronic circuits and can be used in various applications.
Application Areas
General-purpose amplifier and switching circuits
Audio amplifiers
Switching power supplies
Instrumentation and control systems
Product Lifecycle
The BSS64LT1G is an active product and is not nearing discontinuation. Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
Reliable and stable performance in a compact package
Wide operating temperature range for diverse applications
High frequency and low saturation voltage for efficient switching
RoHS3 compliance for environmentally friendly use
Readily available in tape and reel packaging for easy integration